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Research Need: The National Institute of Standards and Technology (NIST)/Center for Nanoscale Science and Technology (CNST) enables science and industry by providing essential measurement methods, ins... Research Need: The National Institute of Standards and Technology (NIST)/Center for Nanoscale Science and Technology (CNST) enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development from discovery to production. The Nanofabrication Operations Group of the CNST has the mission of advancing measurement science by developing novel nanofabrication and nanomanufacturing techniques. NIST seeks to acquire a wide?temperature range inductively coupled plasma enhanced chemical vapor deposition (ICP CVD) system with an electrode capable of heating substrates between 50 degrees Celsius and 800 degree Celsius during the deposition process. The added capability of depositing a variety of high?quality thin ICP CVD films, including silicon dioxide, silicon nitride, silicon oxynitride, TEOS, amorphous silicon and silicon carbide, will allow for NanoFab researchers to employ thin?films: as sacrificial layers in microelectromechanical systems; as waveguides and cladding layers in nanophotonic and optomechanical structures; as metamaterial stack layers; and dielectric layers in electronics applications. We will develop methods of depositing thin films with tailored material (stress/stoichiometry/refractive index) properties in the CNST NanoFab as a resource accessible to NIST and external researchers. NO SOLICITATION DOCUMENTS EXIST AT THIS TIME The CNST NanoFab seeks to acquire an inductively coupled plasma enhanced chemical vapor deposition (ICP CVD) system that will be used to deposit thin films to support a variety of projects ranging from disparate fields of engineering, physical and life sciences. The ICP CVD system should operate in a temperature range between 50 degrees Celsius and 800 degree Celsius. The ICP CVD system shall accommodate substrates from small pieces (on top of carrier substrates) up to 150 mm semi?spec silicon substrates. The overall performance and the success of the numerous existing and future NIST mission critical projects carried out in the CNST NanoFab research projects will depend critically on the ability to accurately deposit ICP CVD films across a wide temperature range spanning between 50 degrees Celsius and 800 degrees Celsius with thicknesses ranging from 20 nm to 2 micrometers. Minimum Requirements The system shall meet or exceed the technical specifications identified below. NIST will not accept first articles or demonstration units. All materials shall be new. Rebuilt systems will not be considered. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system specifications: The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall accommodate substrate sizes up to 150 mm diameter, semi?spec silicon wafers. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped to load: a 100 mm semi?spec silicon wafer substrate. a 150 mm semi?spec silicon wafer substrate. small pieces down to 5 mm by 5 mm shall be accommodated on top a carrier substrate. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall allow deposition of silicon oxide, silicon nitride films, silicon oxynitride, TEOS, amorphous silicon, and silicon carbide. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have recipes for the deposition of silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide. The system shall be equipped with a variable wavelength optical end?point?detection. The system shall also have appropriate cleaning recipes that utilize endpoint detection to help assess chamber cleanliness and requisite cleaning times. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a Gas Pod with 12 lines equipped with: Gas?line heating kit for non?toxic gas lines. 10 standard gas lines with mass flow controllers for non?toxic gases. 2 bypassed gas lines with mass flow controllers for toxic gases. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a heated electrode that can operate between 50 degrees Celsius and 800 degree Celsius. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a 3 kW 2 MHz RF generator connected to a 300 mm diameter ICP source via a vacuum capacitor automatic matching network unit. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a vapor delivery module to allow for bubble?mode precursor delivery with precursor monitoring sensor used for the deposition or TEOS. Deposited films shall have a deposition rate and refractive index control that is independent of wafer loading. The deposited thin film uniformity within?wafer for the silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide films shall be less than plus?or?minus 5 % for 100 mm semi?spec silicon substrates with a 5 mm exclusion zone. Wafer to wafer deposition repeatability for the silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide films shall be less than plus?or?minus 5 % for 100 mm semi?spec silicon substrates. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with chamber clean recipes that allow for wafer?to?wafer deposition repeatability between different thin?film deposition processes. Using 100 % silane gas chemistry for the source of silicon, the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a deposition rate greater than or equal to 100 nm/min at a temperature of 140 degrees Celsius for the silicon oxide, silicon nitride films, silicon oxynitride, and amorphous silicon. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a tunable index of refraction (measured at the HeNe wavelength of 632.8 nm) range between: 1.44 and 1.46 for silicon dioxide 1.95 and 2.05 for silicon nitride The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall deposit silicon dioxide and silicon nitride films with stress levels ranging between plus?or?minus 300 MPa. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have wet etch rates in 10:1 buffered hydrofluoric acid of: Less than 100 nm/min for silicon dioxide Less than 30 nm/min for silicon nitride The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall use a TEOS precursor to produce silicon (di)oxide films with improved conformality in step coverage compared to silane-based films. In particular, step coverage with >75 % conformality for sub-micrometer step height, defined as the ratio of the film thickness on the side surface of a step to the film thickness on the top surface of the step. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with a load?lock. The system shall allow automatic transfer of substrates between the load?lock and the main chamber. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall allow for changeover between 100 mm and 150 mm hardware. When the chamber is cooled down and vented, the duration for the changeover between 100 mm and 150 mm hardware shall be less than 30 minutes. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system control software shall run on the latest Windows operating system. The software shall allow for recipe editing and saving. During tool operation, process parameters such as gas flows, pressure, temperature, recipe name, and process step duration and countdown shall be displayed on the main screen. The software shall allow for datalogging. The software shall save the data?log files in ASCII format. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system control software shall allow for: Automatic recipe operation in user mode. Manual operation in administrator mode. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with a complete pumping system. The electrical utility requirement for the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be standard US 208 V, 60 Hz 3?phase supply configuration. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a minimum of 1-year warranty from date of government acceptance. The vendor shall repair or replace at its cost, any defective items without any additional cost to the government including travel, labor, parts, or any other expense. The seller shell coordinate shipment and installation of the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system with the end user. The seller shall provide an onsite install and process engineer for the installation and qualification of the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system. The seller shall provide training on the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system for the end user. NIST is seeking responses from all responsible sources, including large, foreign, and small businesses. Small businesses are defined under the associated NAICS code for this effort, 334516, as those domestic sources with a size standard of 1,000 employees or less. Please include your company’s size classification and socio-economic status in any response to this notice. Companies that provide equipment that can meet the stated requirements are requested to email a detailed report describing their products to forest.crumpler@nist.gov no later than the response date for this sources sought notice. The report should include achievable specifications and any other information relevant to your product or capabilities.