DEPOSITION OF SILICON DIOXIDE LAYERS ON 100 MM DIAMETER SEMICONDUCTOR WAFERS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION AT 720 °C USING TETRAETHYL ORTHOSILICATE PRECURSOR

Inactive Total Small Business Set-Aside (FAR 19.5)
Notice ID:80NSSC21759054Q

Synopsis: NASA/NSSC has a requirement for DEPOSITION OF SILICON DIOXIDE LAYERS ON 100 MM DIAMETER SEMICONDUCTOR WAFERS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION AT 720 °C USING TETRAETHYL ORTHOSILICAT...

Department/Ind.Agency Subtier Office
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION NATIONAL AERONAUTICS AND SPACE ADMINISTRATION NASA SHARED SERVICES CENTER
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